? semiconductor components industries, llc, 2004 february, 2004 ? rev. 1 1 publication order number: mmbt4403wt1/d mmbt4403wt1 switching transistor pnp silicon features ? moisture sensitivity level: 1 ? esd rating: human body model; 4 kv, machine model; 400 v ? pb?free package is available maximum ratings rating symbol value unit collector?emitter voltage v ceo ?40 vdc collector?base voltage v cbo ?40 vdc emitter?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?600 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board t a = 25 c p d 150 mw thermal resistance, junction?to?ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c sc?70 case 419 style 3 2 3 1 collector 3 1 base 2 emitter http://onsemi.com marking diagram 2x d 2x = specific device code d = date code 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. device package shipping 2 ordering information mmbt4403wt1 sc?70 3000/tape & reel mmbt4403wt1g sc?70 (pb?free) 3000/t ape & reel
mmbt4403wt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown v oltage (note 1) (i c = ?1.0 madc, i b = 0) v (br)ceo ?40 ? vdc collector?base breakdown v oltage (i c = ?0.1 madc, i e = 0) v (br)cbo ?40 ? vdc emitter?base breakdown v oltage (i e = ?0.1 madc, i c = 0) v (br)ebo ?5.0 ? vdc base cutoff current (v ce = ?35 vdc, v eb = ?0.4 vdc) i bev ? ?0.1 m adc collector cutoff current (v ce = ?35 vdc, v eb = ?0.4 vdc) i cex ? ?0.1 m adc on characteristics dc current gain (i c = ?0.1 madc, v ce = ?1.0 vdc) (i c = ?1.0 madc, v ce = ?1.0 vdc) (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?150 madc, v ce = ?2.0 vdc) (note 1) (i c = ?500 madc, v ce = ?2.0 vdc) (note 1) h fe 30 60 100 100 20 ? ? ? 300 ? ? collector? emitter saturation voltage (note 1) (i c = ?150 madc, i b = ?15 madc) (i c = ?500 madc, i b = ?50 madc) v ce(sat) ? ? ?0.4 ?0.75 vdc base? emitter saturation voltage (note 1) (i c = ?150 madc, i b = ?15 madc) (i c = ?500 madc, i b = ?50 madc) v be(sat) ?0.75 ? ?0.95 ?1.3 vdc small?signal characteristics current? gain ? bandwidth product (i c = ?20 madc, v ce = ?10 vdc, f = 100 mhz) f t 200 ? mhz collector?base capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c cb ? 8.5 pf emitter?base capacitance (v be = ?0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = ?1.0 madc, v ce = ?10 vdc, f = 1.0 khz) h ie 1.5 15 k w voltage feedback ratio (i c = ?1.0 madc, v ce = ?10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ?4 small?signal current gain (i c = ?1.0 madc, v ce = ?10 vdc, f = 1.0 khz) h fe 60 500 ? output admittance (i c = ?1.0 madc, v ce = ?10 vdc, f = 1.0 khz) h oe 1.0 100 mhos switching characteristics delay time (v cc = ?30 vdc, v eb = ?2.0 vdc, t d ? 15 ns rise time (v cc 30 vdc, v eb 2.0 vdc, i c = ?150 madc, i b1 = ?15 madc) t r ? 20 ns storage time (v cc = ?30 vdc, i c = ?150 madc, t s ? 225 ns fall time (v cc 30 vdc, i c 150 madc, i b1 = i b2 = ?15 madc) t f ? 30 ns 1. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turn?on time figure 2. turn?off time switching time equivalent test circuit scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +2 v -16 v 10 to 100 m s, duty cycle = 2% 0 1.0 k w -30 v 200 w c s * < 10 pf 1.0 k w -30 v 200 w c s * < 10 pf +4.0 v < 2 ns 1.0 to 100 m s, duty cycle = 2% < 20 ns +14 v 0 -16 v
mmbt4403wt1 http://onsemi.com 3 figure 3. capacitances reverse voltage (volts) 7.0 10 20 30 5.0 figure 4. charge data i c , collector current (ma) 0.1 2.0 5.0 10 20 2.0 30 capacitance (pf) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 5. turn?on time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) c eb q t q a 25 c 100 c transient characteristics 3.0 1.0 0.5 0.3 0.2 0.3 0.2 30 t s , storage time (ns) t, time (ns) c cb 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 0.7 7.0 30 t r , rise time (ns) i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s - 1/8 t f
mmbt4403wt1 http://onsemi.com 4 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 8. frequency effects f, frequency (khz) small?signal characteristics noise figure v ce = ?10 vdc, t a = 25 c; bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 430 w i c = 500 m a, r s = 560 w i c = 50 m a, r s = 2.7 k w i c = 100 m a, r s = 1.6 k w r s = optimum source resistance 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 nf, noise figure (db) figure 9. source resistance effects r s , source resistance (ohms) f = 1 khz i c = 50 m a 100 m a 500 m a 1.0 ma h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other aho parameters for this series of transistors. to obtain these curves, a high?gain and a low?gain unit were selected from the mmbt4403lt1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. figure 10. current gain i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 300 700 30 200 100 1000 h fe , current gain h ie , input impedance (ohms) figure 11. input impedance i c , collector current (madc) 100k 100 50 5.0 7.0 20k 10k 5k 2k 1k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 12. voltage feedback ratio i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.1 20 figure 13. output admittance i c , collector current (madc) 500 1.0 5.0 7.0 50 20 10 5.0 2.0 5.0 2.0 1.0 0.5 0.2 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 500 70 50k 500 200 10 100 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2
mmbt4403wt1 http://onsemi.com 5 static characteristics figure 14. dc current gain i c , collector current (ma) figure 15. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector-emitter voltage (volts) 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma 0.07 0.05 0.03 0.02 0.01 10 ma 100 ma 10 20 30 0.3 0.5 0.7 1.0 3.0 0.1 h , normalized current gain 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 fe t j = 125 c -55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 16. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 17. temperature coefficients i c , collector current (ma) voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(sat) @ v ce = 10 v vc for v ce(sat) vs for v be 200 0.1 0.2 0.5 coefficient (mv/ c) 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 500 ma 0.005
mmbt4403wt1 http://onsemi.com 6 package dimensions c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) style 3: pin 1. base 2. emitter 3. collector sc?70/sot?323 case 419?04 issue l *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* sc?70/sot?323 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mmbt4403wt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
